Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 5W (Ta), 48W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 40.0 A
Technical parameters/Input capacitance (Ciss): 4355pF @15V(Vds)
Technical parameters/dissipated power (Max): 5W (Ta), 48W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7772DP-T1-GE3
|
Vishay Semiconductor | 类似代替 | PowerPAK SO |
Single N-Channel 30V 13mOhm SMT TrenchFET Gen III Power Mosfet - PowerPAK SO-8
|
||
SI7772DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
Single N-Channel 30V 13mOhm SMT TrenchFET Gen III Power Mosfet - PowerPAK SO-8
|
||
SI7788DP-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SI7788DP-T1-GE3
|
Vishay Intertechnology | 类似代替 | SO-8 |
MOSFET N-CH 30V 50A PPAK SO-8
|
||
SIR466DP-T1-GE3
|
VISHAY | 类似代替 | SO-8 |
MOSFET N-CH 30V 40A PPAK SO-8
|
||
SIR466DP-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOIC |
MOSFET N-CH 30V 40A PPAK SO-8
|
||
SIR466DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 30V 40A PPAK SO-8
|
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