Technical parameters/drain source resistance: 41 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.5 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/Input capacitance (Ciss): 325pF @15V(Vds)
Technical parameters/dissipated power (Max): 3.5W (Ta), 10.4W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPak-8
External dimensions/packaging: PowerPak-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7788DP-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
MOSFET N-CH 30V 50A PPAK SO-8
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SI7788DP-T1-GE3
|
Vishay Intertechnology | 功能相似 | SO-8 |
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SIR466DP-T1-GE3
|
VISHAY | 功能相似 | SO-8 |
MOSFET N-CH 30V 40A PPAK SO-8
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SIR466DP-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
MOSFET N-CH 30V 40A PPAK SO-8
|
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SIR466DP-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
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|
||
SIS434DN-T1-GE3
|
Vishay Siliconix | 功能相似 | PowerPAK-1212-8 |
Single N-Channel 40V 0.0076Ω 52W SMT Power Mosfet - PowerPAK-1212-8
|
||
SIS434DN-T1-GE3
|
VISHAY | 功能相似 | PowerPAK-1212-8 |
Single N-Channel 40V 0.0076Ω 52W SMT Power Mosfet - PowerPAK-1212-8
|
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