Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.0285 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 1.25 W |
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Technical parameters/threshold voltage: | 400 mV |
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Technical parameters/drain source voltage (Vds): | 12 V |
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Technical parameters/Continuous drain current (Ids): | 5.1A |
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Technical parameters/rise time: | 35 ns |
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Technical parameters/Input capacitance (Ciss): | 1225pF @6V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/descent time: | 12 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1250 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 3000 |
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Other/Manufacturing Applications: | Power Management, Industrial |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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SI2315BDS-T1-E3
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Vishay Siliconix | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
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SI2315BDS-T1-E3
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Vishay Intertechnology | 类似代替 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
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SI2315BDS-T1-E3
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VISHAY | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
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SI2315BDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2315BDS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2315BDS-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2333DS-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W
|
||
SI2333DS-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W
|
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