Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.032 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.25 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Continuous drain current (Ids): -4.10 A
Technical parameters/rise time: 45 ns
Technical parameters/Input capacitance (Ciss): 1100pF @6V(Vds)
Technical parameters/rated power (Max): 750 mW
Technical parameters/descent time: 60 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.04 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1.02 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Other/Manufacturing Applications: power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2333DS-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOT-23 |
VISHAY SI2333DS-T1-GE3 场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW
|
||
SI2333DS-T1-GE3
|
VISHAY | 功能相似 | SOT-23-3 |
VISHAY SI2333DS-T1-GE3 场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review