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Model SI2333DS-T1-GE3
Description VISHAY SI2333DS-T1-GE3 场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-23
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.2  yuan 2.2yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2596) Minimum order quantity(1)
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Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.025 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

750 mW

 

Technical parameters/drain source voltage (Vds):

-12.0 V

 

Technical parameters/Continuous drain current (Ids):

-4.10 A

 

Technical parameters/Input capacitance (Ciss):

1100pF @6V(Vds)

 

Technical parameters/descent time:

60 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

750 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23

 

Dimensions/Height:

1.02 mm

 

Dimensions/Packaging:

SOT-23

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2333DS-T1-E3 SI2333DS-T1-E3 VISHAY 功能相似 SOT-23-3
P 通道 MOSFET，8V 至 20V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
PDF
SI2333DS-T1-E3 SI2333DS-T1-E3 Vishay Semiconductor 功能相似 TO-236
P 通道 MOSFET，8V 至 20V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
PDF

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