Technical parameters/drain source resistance: | 0.1 Ω |
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Technical parameters/dissipated power: | 0.75 W |
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Technical parameters/Input capacitance: | 715pF @6V |
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Technical parameters/drain source voltage (Vds): | 12 V |
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Technical parameters/Input capacitance (Ciss): | 715pF @6V(Vds) |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 750mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 3.04 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML6401GTRPBF
|
Infineon | 功能相似 | SOT-23-3 |
Trans MOSFET P-CH 12V 4.3A 3Pin SOT-23 T/R
|
||
SI2315BDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2315BDS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2315BDS-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2333CDS-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
TRANS MOSFET P-CH 12V 5.1A 3Pin SOT-23T/R
|
||
SI2333CDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
TRANS MOSFET P-CH 12V 5.1A 3Pin SOT-23T/R
|
||
SI2333DS-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W
|
||
SI2333DS-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W
|
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