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Model IRLML6401GTRPBF
Description HEXFET® N Channel power MOSFET maximum 50A, Infineon HEXFET ® Power MOSFETs have various robust single N-channel devices used to provide AC to DC and DC to DC power for audio, consumer electronics, motor control, lighting, and household appliances. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.5  yuan 1.5yuan
5+:
$ 2.0304
25+:
$ 1.8800
50+:
$ 1.7747
100+:
$ 1.7296
500+:
$ 1.6995
2500+:
$ 1.6619
5000+:
$ 1.6469
10000+:
$ 1.6243
Quantity
5+
25+
50+
100+
500+
Price
$2.0304
$1.8800
$1.7747
$1.7296
$1.6995
Price $ 2.0304 $ 1.8800 $ 1.7747 $ 1.7296 $ 1.6995
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7912) Minimum order quantity(5)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 50 mΩ

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1.3 W

Technical parameters/threshold voltage: 0.55 V

Technical parameters/drain source voltage (Vds): 12 V

Technical parameters/leakage source breakdown voltage: 12 V

Technical parameters/Continuous drain current (Ids): 4.3A

Technical parameters/rise time: 32 ns

Technical parameters/Input capacitance (Ciss): 830pF @10V(Vds)

Technical parameters/descent time: 210 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.3W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/length: 3.04 mm

External dimensions/width: 2.64 mm

External dimensions/height: 1.02 mm

External dimensions/packaging: SOT-23-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRLML6401PBF IRLML6401PBF Infineon 功能相似 SOT-23
INFINEON IRLML6401PBF 晶体管, MOSFET, P沟道, -4.3 A, -12 V, 50 mohm, -4.5 V, -550 mV
PDF
IRLML6401TR IRLML6401TR Infineon 类似代替 SOT-23-3
SOT-23P-CH 12V 4.3A
IRLML6401TR IRLML6401TR International Rectifier 类似代替 SOT-23
SOT-23P-CH 12V 4.3A
PDF
IRLML6401TRPBF IRLML6401TRPBF Infineon 类似代替 SOT-23-3
INFINEON IRLML6401TRPBF 晶体管, MOSFET, P沟道, -4.3 A, -12 V, 0.05 ohm, -4.5 V, -550 mV
PDF

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