Technical parameters/rated voltage (DC): -12.0 V
Technical parameters/rated current: -4.30 A
Technical parameters/dissipated power: 1.3 W
Technical parameters/product series: IRLML6401
Technical parameters/drain source voltage (Vds): 12.0 V
Technical parameters/Continuous drain current (Ids): 4.30 A
Technical parameters/rise time: 32.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML6401GTRPBF
|
Infineon | 类似代替 | SOT-23-3 |
HEXFET® N 通道功率 MOSFET 最大 50A，Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备，用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
||
IRLML6401PBF
|
Infineon | 功能相似 | SOT-23 |
INFINEON IRLML6401PBF 晶体管, MOSFET, P沟道, -4.3 A, -12 V, 50 mohm, -4.5 V, -550 mV
|
||
IRLML6401TRPBF
|
Infineon | 类似代替 | SOT-23-3 |
INFINEON IRLML6401TRPBF 晶体管, MOSFET, P沟道, -4.3 A, -12 V, 0.05 ohm, -4.5 V, -550 mV
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review