Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.05 Ω
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 1.3 W
Technical parameters/threshold voltage: 550 mV
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/Continuous drain current (Ids): 4.3A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Power Management, Industrial, Power Management, Consumer Electronics, Consumer Electronics, Portable Devices, Industrial, Portable Devices
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML6401GTRPBF
|
Infineon | 功能相似 | SOT-23-3 |
HEXFET® N 通道功率 MOSFET 最大 50A，Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备，用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
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IRLML6401TRPBF
|
Infineon | 功能相似 | SOT-23-3 |
INFINEON IRLML6401TRPBF 晶体管, MOSFET, P沟道, -4.3 A, -12 V, 0.05 ohm, -4.5 V, -550 mV
|
||
SI2305DS-T1-E3
|
Vishay Semiconductor | 功能相似 | TO-236 |
VISHAY SI2305DS-T1-E3 晶体管, MOSFET, P沟道, -3.5 A, -8 V, 52 mohm, -4.5 V, -800 mV
|
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