Technical parameters/rated power: | 1.25 W |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 52 mΩ |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 1.25 W |
|
Technical parameters/drain source voltage (Vds): | -8.00 V |
|
Technical parameters/breakdown voltage of gate source: | ±8.00 V |
|
Technical parameters/Continuous drain current (Ids): | 3.50 A |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-236 |
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Dimensions/Packaging: | TO-236 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/06/15 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML6401PBF
|
Infineon | 功能相似 | SOT-23 |
INFINEON IRLML6401PBF 晶体管, MOSFET, P沟道, -4.3 A, -12 V, 50 mohm, -4.5 V, -550 mV
|
||
IRLML6401TRPBF
|
Infineon | 功能相似 | SOT-23-3 |
INFINEON IRLML6401TRPBF 晶体管, MOSFET, P沟道, -4.3 A, -12 V, 0.05 ohm, -4.5 V, -550 mV
|
||
SI2305CDS-T1-GE3
|
Vishay Intertechnology | 功能相似 | SOT-23-3 |
VISHAY SI2305CDS-T1-GE3 晶体管, MOSFET, P沟道, -5.8 A, -8 V, 0.028 ohm, -4.5 V, -1 V
|
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