Technical parameters/rated power: 1.19 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.04 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.19 W
Technical parameters/drain source voltage (Vds): 12 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): -3.00 A
Technical parameters/rise time: 35 ns
Technical parameters/Input capacitance (Ciss): 715pF @6V(Vds)
Technical parameters/rated power (Max): 750 mW
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1190 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 3000
Other/Manufacturing Applications: industry
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML6401GTRPBF
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Infineon | 功能相似 | SOT-23-3 |
Trans MOSFET P-CH 12V 4.3A 3Pin SOT-23 T/R
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SI2315BDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
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SI2315BDS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
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SI2315BDS-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOT-23 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2333CDS-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
TRANS MOSFET P-CH 12V 5.1A 3Pin SOT-23T/R
|
||
SI2333CDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
TRANS MOSFET P-CH 12V 5.1A 3Pin SOT-23T/R
|
||
SI2333DS-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W
|
||
SI2333DS-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W
|
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