Technical parameters/drain source resistance: | 4.4 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Continuous drain current (Ids): | 2.00 A |
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Technical parameters/rise time: | 23 ns |
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Technical parameters/Input capacitance (Ciss): | 350pF @25V(Vds) |
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Technical parameters/descent time: | 25 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 2000 |
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Compliant with standards/RoHS standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFRC20PBF
|
Kersemi Electronic | 完全替代 |
MOSFET N-CH 600V 2A DPAK
|
|||
IRFRC20PBF
|
Vishay Intertechnology | 完全替代 | TO-252 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRLPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRLPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 2A DPAK
|
||
|
|
Kersemi Electronic | 完全替代 |
MOSFET N-CH 600V 2A DPAK
|
|||
IRFRC20TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRPBF
|
International Rectifier | 完全替代 | TO-252 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 2A DPAK
|
||
STD3NK60ZT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD3NK60ZT4 功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
|
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