Technical parameters/drain source resistance: 4.4 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 2.00 A
Technical parameters/rise time: 23 ns
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFRC20PBF
|
Kersemi Electronic | 完全替代 |
MOSFET N-CH 600V 2A DPAK
|
|||
IRFRC20PBF
|
Vishay Intertechnology | 完全替代 | TO-252 |
MOSFET N-CH 600V 2A DPAK
|
||
|
|
Kersemi Electronic | 完全替代 |
MOSFET N-CH 600V 2A DPAK
|
|||
IRFRC20TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRPBF
|
International Rectifier | 完全替代 | TO-252 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRRPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 2A DPAK
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review