Technical parameters/rated power: 42 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 4.4 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 42 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 2.00 A
Technical parameters/rise time: 23 ns
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 42 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFRC20PBF
|
Kersemi Electronic | 类似代替 |
VISHAY IRFRC20PBF 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
|
|||
IRFRC20PBF
|
Vishay Intertechnology | 类似代替 | TO-252 |
VISHAY IRFRC20PBF 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
|
||
STD3NK60ZT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD3NK60ZT4 功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
|
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