Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 2.00 A
Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 2.00 A
Technical parameters/rise time: 23.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFRC20PBF
|
Kersemi Electronic | 类似代替 |
VISHAY IRFRC20PBF 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
|
|||
IRFRC20PBF
|
Vishay Intertechnology | 类似代替 | TO-252 |
VISHAY IRFRC20PBF 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
|
||
STD3NK60ZT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD3NK60ZT4 功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review