Technical parameters/dissipated power: 2.5W (Ta), 42W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/dissipated power (Max): 2.5W (Ta), 42W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFRC20PBF
|
Kersemi Electronic | 完全替代 |
MOSFET N-CH 600V 2A DPAK
|
|||
IRFRC20PBF
|
Vishay Intertechnology | 完全替代 | TO-252 |
MOSFET N-CH 600V 2A DPAK
|
||
|
|
Kersemi Electronic | 完全替代 |
MOSFET N-CH 600V 2A DPAK
|
|||
IRFRC20TRPBF
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRPBF
|
International Rectifier | 完全替代 | TO-252 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 2A DPAK
|
||
IRFRC20TRRPBF
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 600V 2A DPAK
|
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