Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/rated current: | 23.0 A |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.8 W |
|
Technical parameters/product series: | IRF6613 |
|
Technical parameters/Input capacitance: | 5.95 nF |
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Technical parameters/gate charge: | 63.0 nC |
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Technical parameters/drain source voltage (Vds): | 40 V |
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Technical parameters/Leakage source breakdown voltage: | 40.0 V |
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Technical parameters/Continuous drain current (Ids): | 18.0 A, 150 mA |
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Technical parameters/Input capacitance (Ciss): | 5950pF @15V(Vds) |
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Technical parameters/rated power (Max): | 2.8 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 7 |
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Encapsulation parameters/Encapsulation: | Direct-FET |
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Dimensions/Packaging: | Direct-FET |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6613
|
International Rectifier | 类似代替 |
Direct-FET N-CH 40V 23A
|
|||
IRF6613
|
Infineon | 类似代替 | Direct-FET |
Direct-FET N-CH 40V 23A
|
||
IRF6613TR1PBF
|
Infineon | 功能相似 | Direct-FET |
Direct-FET N-CH 40V 23A
|
||
IRF6613TR1PBF
|
International Rectifier | 功能相似 | DirectFET™ Isometric MT |
Direct-FET N-CH 40V 23A
|
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