Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.8 W
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 23A
Technical parameters/rise time: 47 ns
Technical parameters/Input capacitance (Ciss): 5950pF @15V(Vds)
Technical parameters/descent time: 4.9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 2800 mW
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: Direct-FET
External dimensions/length: 6.35 mm
External dimensions/width: 5.05 mm
External dimensions/height: 0.7 mm
External dimensions/packaging: Direct-FET
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6613TRPBF
|
International Rectifier | 类似代替 | Direct-FET |
INFINEON IRF6613TRPBF 晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V 新
|
||
IRF6613TRPBF
|
Infineon | 类似代替 | Direct-FET |
INFINEON IRF6613TRPBF 晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V 新
|
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