Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 23.0 A
Technical parameters/drain source resistance: 3.4 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.8 mW
Technical parameters/product series: IRF6613
Technical parameters/threshold voltage: 1.35 V
Technical parameters/input capacitance: 5.95 nF
Technical parameters/gate charge: 63.0 nC
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: 40.0 V
Technical parameters/Continuous drain current (Ids): 18.0 A
Technical parameters/Input capacitance (Ciss): 5950pF @15V(Vds)
Technical parameters/rated power (Max): 2.8 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: DirectFET™ Isometric MT
External dimensions/packaging: DirectFET™ Isometric MT
Physical parameters/operating temperature: -40℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6613TRPBF
|
International Rectifier | 功能相似 | Direct-FET |
INFINEON IRF6613TRPBF 晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V 新
|
||
IRF6613TRPBF
|
Infineon | 功能相似 | Direct-FET |
INFINEON IRF6613TRPBF 晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V 新
|
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