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Model IRF6613
Description Trans MOSFET N-CH Si 40V 23A 7Pin Direct-FET MT
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Brand: International Rectifier
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3764) Minimum order quantity(1)
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Technical parameters/drain source resistance: 3.40 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 89.0 W

Technical parameters/product series: IRF6613

Technical parameters/drain source voltage (Vds): 40.0 V

Technical parameters/leakage source breakdown voltage: 40.0 V

Technical parameters/Continuous drain current (Ids): 18.0 A

Package parameters/number of pins: 5

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF6613TRPBF IRF6613TRPBF International Rectifier 类似代替 Direct-FET
INFINEON IRF6613TRPBF 晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V 新
PDF
IRF6613TRPBF IRF6613TRPBF Infineon 类似代替 Direct-FET
INFINEON IRF6613TRPBF 晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V 新
PDF

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