Technical parameters/rated power: 89 W
Technical parameters/drain source resistance: 0.0034 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.8 mW
Technical parameters/threshold voltage: 1.35 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 23A
Technical parameters/Input capacitance (Ciss): 5950pF @15V(Vds)
Technical parameters/rated power (Max): 2.8 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 2.8W (Ta), 89W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: Direct-FET
External dimensions/packaging: Direct-FET
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6613TRPBF
|
International Rectifier | 功能相似 | Direct-FET |
INFINEON IRF6613TRPBF 晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V 新
|
||
IRF6613TRPBF
|
Infineon | 功能相似 | Direct-FET |
INFINEON IRF6613TRPBF 晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V 新
|
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