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Model PDTB113ZK
Description 低VCEsat晶体管（ BISS ）晶体管 Low VCEsat (BISS) transistors
Product QR code
Brand: NXP
Packaging MPAK
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9316) Minimum order quantity(1)
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Technical parameters/polarity:

PNP

 

Technical parameters/breakdown voltage (collector emitter):

50 V

 

Technical parameters/Maximum allowable collector current:

500mA

 

Encapsulation parameters/Encapsulation:

MPAK

 

Dimensions/Packaging:

MPAK

 

Other/Product Lifecycle:

Unknown

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PDTB113EK PDTB113EK NXP 功能相似 MPAK
低VCEsat晶体管（ BISS ）晶体管 Low VCEsat (BISS) transistors
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PDTB113ET,215 PDTB113ET,215 Nexperia 功能相似 SOT-23-3
TO-236AB PNP 50V 500mA
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PDTB113ET,215 PDTB113ET,215 NXP 功能相似 SOT-23-3
TO-236AB PNP 50V 500mA
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PDTB113ZT PDTB113ZT NXP 功能相似 SOT-23
NXP PDTB113ZT 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -500 mA, 70 hFE
PDF
PDTB113ZT,215 PDTB113ZT,215 NXP 功能相似 SOT-23-3
NXP PDTB113ZT,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -500 mA, 70 hFE
PDF
PDTB113ZT,215 PDTB113ZT,215 Nexperia 功能相似 SOT-23-3
NXP PDTB113ZT,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -500 mA, 70 hFE
PDF

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