Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 70 @50mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive, industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTB113ZKT146
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
PNP 晶体管，ROHM ### Digital Transistors, ROHM Resistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
|
||
PDTB113ET,215
|
Nexperia | 类似代替 | SOT-23-3 |
TO-236AB PNP 50V 500mA
|
||
PDTB113ET,215
|
NXP | 类似代替 | SOT-23-3 |
TO-236AB PNP 50V 500mA
|
||
PDTB113ZT,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PDTB113ZT,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -500 mA, 70 hFE
|
||
PDTB113ZT,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP PDTB113ZT,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -500 mA, 70 hFE
|
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