Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 500mA
Technical parameters/minimum current amplification factor (hFE): 33 @50mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA124EKAT146
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
ROHM DTA124EKAT146 单晶体管 双极, 数字式, PNP, 50 V, 250 MHz, 200 mW, 100 mA, 56 hFE
|
||
PDTB113ET,215
|
Nexperia | 类似代替 | SOT-23-3 |
Nexperia PDTB113ET,215 PNP 数字晶体管, 500 mA, Vce=50 V, 1 kΩ, 电阻比:1, 3引脚 SOT-23 (TO-236AB)封装
|
||
PDTB113ET,215
|
NXP | 类似代替 | SOT-23-3 |
Nexperia PDTB113ET,215 PNP 数字晶体管, 500 mA, Vce=50 V, 1 kΩ, 电阻比:1, 3引脚 SOT-23 (TO-236AB)封装
|
||
PDTB113ZT
|
NXP | 功能相似 | SOT-23 |
双电阻器数字 PNP 晶体管，Nexperia ### 数字晶体管，Nexperia 配备电阻器的双极性晶体管也称为数字晶体管或偏流电阻器的晶体管，包含一个或两个集成电阻器。 单一系列输入电阻器，或两个电阻器的分压器能直接从数字源驱动这些设备。 提供单和双晶体管型号。
|
||
PDTB113ZT,215
|
NXP | 类似代替 | SOT-23-3 |
NXP PDTB113ZT,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -500 mA, 70 hFE
|
||
PDTB113ZT,215
|
Nexperia | 类似代替 | SOT-23-3 |
NXP PDTB113ZT,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -500 mA, 70 hFE
|
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