Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 500mA
Technical parameters/minimum current amplification factor (hFE): 70
Technical parameters/DC current gain (hFE): 70
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power Management, Automotive, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PDTB113ET,215
|
Nexperia | 功能相似 | SOT-23-3 |
TO-236AB PNP 50V 500mA
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PDTB113ET,215
|
NXP | 功能相似 | SOT-23-3 |
TO-236AB PNP 50V 500mA
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PDTB113ZT,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PDTB113ZT,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -500 mA, 70 hFE
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PDTB113ZT,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP PDTB113ZT,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -500 mA, 70 hFE
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