Micron Technology has significantly adjusted its $200 billion U.S. semiconductor expansion plan, delaying its New York fab project by five years while accelerating construction of its second Idaho facility (ID2). Subsidies from the U.S. CHIPS and Science Act will now prioritize the Idaho project.
Originally announced in June, Micron’s blueprint included four high-volume fabs in New York and a new memory plant in Boise, Idaho, aiming to strengthen U.S. production of DRAM and high-bandwidth memory (HBM) for AI applications. The first New York fab (Fab 1), initially scheduled for completion in 2028, is now expected to be finished by 2030, with full production across all four New York fabs delayed to 2045—five years behind the original timeline.
In contrast, Micron will fast-track its Idaho ID2 fab, leveraging its proximity to the company’s R&D center to achieve economies of scale and accelerate HBM production. The Idaho project is expected to create over 17,000 jobs.
The shift in priorities is reflected in an updated $6.1 billion CHIPS Act funding agreement with the U.S. Department of Commerce, extending the operational timeline for the New York fabs by approximately two years and reallocating resources to Idaho.
While Micron has not publicly detailed the reasons for the adjustment, industry analysts view it as a strategic reallocation of resources to better capitalize on surging AI-driven demand for HBM and advanced DRAM.
ICgoodFind :Micron’s realignment reflects a focused response to AI market opportunities, emphasizing speed to market and strategic resource deployment.
