Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Medium high voltage MOS transistorDescription: WOLFSPEED C2M0045170D 功率场效应管, MOSFET, N沟道, 72 A, 1.7 kV, 0.045 ohm, 20 V, 2.6 V 新3489 -
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Category: Medium high voltage MOS transistorDescription: GENESIC SEMICONDUCTOR GA50JT12-247 Silicon carbide crystal tube, 1.2KV, 50A, TO-247AB16421+$830.003210+$800.880350+$797.2399100+$793.5996150+$787.7750250+$782.6785500+$777.58201000+$771.7574 -
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Category: PChannel MOS transistorDescription: Trans MOSFET P-CH 60V 30A 3Pin(3+Tab) TO-220NIS49391+$283.475010+$276.080050+$270.4105100+$268.4385200+$266.9595500+$264.98751000+$263.75502000+$262.5225 -
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Category: Medium high voltage MOS transistorDescription: Trans JFET N-CH 1200V 20A SiC Automotive 3Pin(3+Tab) TO-247AB15841+$190.894310+$185.914450+$182.0965100+$180.7686200+$179.7726500+$178.44461000+$177.61472000+$176.7847 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPW60R045CPFKSA1 Power Field Effect Transistor, MOSFET, N-channel, 60 A, 650 V, 0.04 ohm, 10 V, 3 V12881+$190.515910+$185.545950+$181.7356100+$180.4103200+$179.4163500+$178.09101000+$177.26262000+$176.4343 -
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Category: Medium high voltage MOS transistorDescription: IXYS SEMICONDUCTOR IXFN44N80 Power Field Effect Transistor, MOSFET, N-channel, 44 A, 800 V, 165 Mohm, 10 V, 4.5 V32311+$143.250910+$139.513950+$136.6489100+$135.6524200+$134.9050500+$133.90851000+$133.28562000+$132.6628 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPW65R019C7FKSA1 Power Field Effect Transistor, MOSFET, N-channel, 75 A, 650 V, 0.017 ohm, 10 V, 3.5 V93831+$134.597210+$131.085950+$128.3940100+$127.4576200+$126.7554500+$125.81911000+$125.23392000+$124.6487 -
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Category: Medium high voltage MOS transistorDescription: IXYS SEMICONDUCTOR IXFH18N100Q3 Power Field Effect Transistor, MOSFET, N-channel, 18 A, 1 kV, 0.66 ohm, 10 V, 6.5 V33991+$127.326910+$124.005350+$121.4587100+$120.5730200+$119.9087500+$119.02291000+$118.46932000+$117.9157 -
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Category: Medium high voltage MOS transistorDescription: GENESIC SEMICONDUCTOR GA10JT12-263 Silicon carbide crystal tube, 1.2KV, 10A, TO-26381631+$114.655010+$109.6700100+$108.7727250+$108.0748500+$106.97811000+$106.47962500+$105.78175000+$105.1835 -
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Category: Medium high voltage MOS transistorDescription: VISHAY SIHS90N65E-E3 功率场效应管, MOSFET, N沟道, 87 A, 650 V, 0.025 ohm, 10 V, 4 V 新3535 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCH085N80_F155 Power Field Effect Transistor, MOSFET, N-channel, 46 A, 800 V, 0.067 ohm, 10 V, 4.5 V New96641+$104.231410+$99.6996100+$98.8839250+$98.2494500+$97.25241000+$96.79922500+$96.16485000+$95.6210 -
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Category: Medium high voltage MOS transistorDescription: NTE ELECTRONICS NTE2377 Field effect transistor, MOSFET30941+$100.285810+$95.9255100+$95.1407250+$94.5302500+$93.57101000+$93.13492500+$92.52455000+$92.0013 -
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Category: Medium high voltage MOS transistorDescription: SupreMOS® MOSFET，Fairchild Semiconductor Fairchild 推出了新一代 600V 超级结 MOSFET - SupreMOS®。 与 Fairchild 的 600V SuperFET™ MOSFET 相比，其低 RDS（接通）和总栅极电荷让品质因素 (FOM) 降低了 40%。 此外，SupreMOS 系列为相同的 RDS（接通）提供低栅极电荷，提供极佳的切换性能，切换和传导损耗降低 20%，从而获得更高的效率。 这些特征让电源符合用于台式 PC 的 ENERGY STAR® 80 PLUS 黄金分类和用于服务器的白金分类。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。5179 -
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Category: Medium high voltage MOS transistorDescription: IXYS SEMICONDUCTOR IXFH12N100 Power Field Effect Transistor, MOSFET, N-channel, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V44321+$88.239510+$84.4030100+$83.7124250+$83.1753500+$82.33131000+$81.94762500+$81.41055000+$80.9502 -
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Category: Medium high voltage MOS transistorDescription: FAIRCHILD SEMICONDUCTOR FCH47N60_F133 Power Field Effect Transistor, MOSFET, N-channel, 47 A, 600 V, 0.058 ohm, 10 V, 3 V94061+$87.878410+$84.0576100+$83.3699250+$82.8349500+$81.99441000+$81.61232500+$81.07745000+$80.6189 -
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Category: Medium high voltage MOS transistorDescription: TO-3P N-CH 900V 14A31821+$77.941310+$74.5525100+$73.9425250+$73.4681500+$72.72261000+$72.38372500+$71.90935000+$71.5026 -
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Category: Medium high voltage MOS transistorDescription: NTE ELECTRONICS NTE2387. Field effect transistor, MOSFET, N-channel, 800V, 4A, TO-22013751+$72.918110+$69.7477100+$69.1770250+$68.7332500+$68.03571000+$67.71872500+$67.27485000+$66.8944 -
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Category: Medium high voltage MOS transistorDescription: STMICROELECTRONICS STW56N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 50 A, 600 V, 0.052 ohm, 10 V, 4 V 新6263 -
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Category: Medium high voltage MOS transistorDescription: Silicon Carbide Power MOSFET, N Channel, 31A, 1.2kV, 0.08Ω, 18V, 5.6V95751+$66.939210+$64.0288100+$63.5049250+$63.0975500+$62.45721000+$62.16612500+$61.75875000+$61.4094 -
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Category: Medium high voltage MOS transistorDescription: WOLFSPEED C2M1000170D. Field effect transistor, MOSFET, N-channel, 1.7KV, 4.9A, TO-247-326291+$65.467210+$62.6208100+$62.1084250+$61.7100500+$61.08371000+$60.79912500+$60.40065000+$60.0590 -
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Category: Medium high voltage MOS transistorDescription: IXYS SEMICONDUCTOR IXFH12N100F Power Field Effect Transistor, MOSFET, N-channel, 12 A, 1 kV, 1.05 ohm, 10 V, 3 V42821+$63.802010+$61.0280100+$60.5287250+$60.1403500+$59.53001000+$59.25262500+$58.86435000+$58.5314 -
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Category: PChannel MOS transistorDescription: Trans MOSFET P-CH 55V 74A 3Pin(3+Tab) TO-220AB50301+$58.026710+$55.5038100+$55.0497250+$54.6965500+$54.14141000+$53.88912500+$53.53595000+$53.2332 -
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Category: Medium high voltage MOS transistorDescription: INFINEON SPW35N60CFDFKSA1 Power Field Effect Transistor, MOSFET, N-channel, 34.1 A, 600 V, 0.1 ohm, 10 V, 4 V66731+$56.971610+$53.7027100+$51.2744250+$50.9008500+$50.52721000+$50.10702500+$49.73345000+$49.4999 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPW60R099CPFKSA1 Power Field Effect Transistor, MOSFET, N-channel, 31 A, 600 V, 99 Mohm, 10 V, 3 V92211+$53.705610+$50.6242100+$48.3351250+$47.9829500+$47.63071000+$47.23452500+$46.88245000+$46.6623 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPW65R070C6FKSA1 Power Field Effect Transistor, MOSFET, N-channel, 53.5 A, 650 V, 0.063 ohm, 10 V, 3 V72711+$51.501110+$48.5461100+$46.3510250+$46.0133500+$45.67551000+$45.29562500+$44.95795000+$44.7468 -
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Category: Medium high voltage MOS transistorDescription: FUJI ELECTRIC FMV30N60S1 Power Field Effect Transistor, MOSFET, N-channel, 30 A, 600 V, 0.106 ohm, 10 V, 3 V91001+$49.029410+$46.2162100+$44.1264250+$43.8049500+$43.48341000+$43.12172500+$42.80025000+$42.5993 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R199CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 16 A, 650 V, 0.18 ohm, 10 V, 3 V76741+$47.623910+$44.8914100+$42.8615250+$42.5492500+$42.23701000+$41.88562500+$41.57335000+$41.3782 -
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Category: Medium high voltage MOS transistorDescription: ROHM SCT3160KL Power MOSFET, SiC, N Channel, 17A, 1.2kV, 0.16Ω, 18V, 5.6V New33071+$47.104210+$44.4015100+$42.3938250+$42.0849500+$41.77601000+$41.42852500+$41.11975000+$40.9266 -
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Category: Medium high voltage MOS transistorDescription: INFINEON IPB60R099CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 31 A, 650 V, 0.09 ohm, 10 V, 3 V1122
