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Model IPB60R099CPATMA1
Description INFINEON IPB60R099CPATMA1 Power Field Effect Transistor, MOSFET, N-channel, 31 A, 650 V, 0.09 ohm, 10 V, 3 V
Product QR code
Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
38.46  yuan 38.46yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1122) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

25.0 V

 

Technical parameters/rated current:

50.0 A

 

Technical parameters/rated power:

255 W

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.09 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

255 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/Input capacitance:

2.80 nF

 

Technical parameters/gate charge:

80.0 nC

 

Technical parameters/drain source voltage (Vds):

650 V

 

Technical parameters/Continuous drain current (Ids):

31.0 A

 

Technical parameters/rise time:

5 ns

 

Technical parameters/Input capacitance (Ciss):

2800pF @100V(Vds)

 

Technical parameters/descent time:

5 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

255 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Length:

10.31 mm

 

Dimensions/Width:

9.45 mm

 

Dimensions/Height:

4.57 mm

 

Dimensions/Packaging:

TO-263-3

 

Other/Product Lifecycle:

Not Recommended for New Designs

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Consumer Electronics, Industrial, Industrial,

 

Compliant with standards/RoHS standards:

 

Compl

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIHB30N60E-GE3 SIHB30N60E-GE3 Vishay Siliconix 功能相似 TO-263-3
N 通道 MOSFET，E 系列，低品质因数，Vishay Semiconductor Vishay E 系列 MOSFET 电源是高电压晶体管，具有超低最大接通电阻、低灵敏值和快速切换功能。 它们提供各种电流额定值。 典型应用包括服务器和电信电源、LED 照明、回扫转换器、功率因数校正 (PFC) 和开关模式电源 (SMPS)。 ### 特点 低灵敏值 (FOM) RDS(on) x Qg 低输入电容 (Ciss) 低接通电阻（RDS（接通）） 超低栅极电荷 (Qg) 快速切换 减少切换和传导损耗 ### MOSFET 晶体管，Vishay Semiconductor
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STB34NM60ND STB34NM60ND ST Microelectronics 功能相似 TO-263-3
STMICROELECTRONICS STB34NM60ND 功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.097 ohm, 10 V, 4 V
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