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Model SIHB30N60E-GE3
Description Trans MOSFET N-CH 600V 29A 3Pin(2+Tab) D2PAK
Product QR code
Brand: Vishay Siliconix
Packaging TO-263-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
22.12  yuan 22.12yuan
5+:
$ 25.8816
50+:
$ 24.7755
200+:
$ 24.1561
500+:
$ 24.0013
1000+:
$ 23.8464
2500+:
$ 23.6695
5000+:
$ 23.5589
7500+:
$ 23.4483
Quantity
5+
50+
200+
500+
1000+
Price
$25.8816
$24.7755
$24.1561
$24.0013
$23.8464
Price $ 25.8816 $ 24.7755 $ 24.1561 $ 24.0013 $ 23.8464
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7880) Minimum order quantity(5)
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Technical parameters/dissipated power: 250 W

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Input capacitance (Ciss): 2600pF @100V(Vds)

Technical parameters/rated power (Max): 250 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 250W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HW30 HW30 Extech Instruments 功能相似
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD,
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