Technical parameters/rated voltage (DC): | 800 V |
|
Technical parameters/rated current: | 7.80 A |
|
Technical parameters/dissipated power: | 190 W |
|
Technical parameters/drain source voltage (Vds): | 800 V |
|
Technical parameters/Leakage source breakdown voltage: | 800V (min) |
|
Technical parameters/Continuous drain current (Ids): | 8.20 A |
|
Technical parameters/rise time: | 38 ns |
|
Technical parameters/descent time: | 39 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-247-3 |
|
Dimensions/Packaging: | TO-247-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFPE50PBF
|
Infineon | 完全替代 | TO-247 |
Trans MOSFET N-CH 800V 7.8A 3Pin(3+Tab) TO-247AC
|
||
|
|
LiteOn | 完全替代 | TO-247-3 |
Trans MOSFET N-CH 800V 7.8A 3Pin(3+Tab) TO-247AC
|
||
IRFPE50PBF
|
Vishay Intertechnology | 完全替代 | TO-247 |
Trans MOSFET N-CH 800V 7.8A 3Pin(3+Tab) TO-247AC
|
||
IRFPE50PBF
|
VISHAY | 完全替代 | TO-247-3 |
Trans MOSFET N-CH 800V 7.8A 3Pin(3+Tab) TO-247AC
|
||
IRFPE50PBF
|
Vishay Semiconductor | 完全替代 | TO-247 |
Trans MOSFET N-CH 800V 7.8A 3Pin(3+Tab) TO-247AC
|
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