Technical parameters/rated voltage (DC): 800 V
Technical parameters/rated current: 7.80 A
Technical parameters/rated power: 190 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 190 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 3100pF @25V
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/leakage source breakdown voltage: 800 V
Technical parameters/Continuous drain current (Ids): 7.80 A
Technical parameters/rise time: 38 ns
Technical parameters/Input capacitance (Ciss): 3100pF @25V(Vds)
Technical parameters/descent time: 39 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 190 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/length: 15.87 mm
External dimensions/width: 5.31 mm
External dimensions/height: 20.7 mm
External dimensions/packaging: TO-247
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Safety, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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ETC | 功能相似 |
STMICROELECTRONICS STW10NK80Z 功率场效应管, MOSFET, N沟道, 9 A, 800 V, 900 mohm, 10 V, 3.75 V
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STW10NK80Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW10NK80Z 功率场效应管, MOSFET, N沟道, 9 A, 800 V, 900 mohm, 10 V, 3.75 V
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STW8NK80Z
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ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW8NK80Z 功率场效应管, MOSFET, N沟道, 6.2 A, 800 V, 1.5 ohm, 10 V, 3.75 V
|
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