Technical parameters/number of channels: 1
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/packaging: TO-247-3
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ETC | 功能相似 |
STMICROELECTRONICS STW10NK80Z 功率场效应管, MOSFET, N沟道, 9 A, 800 V, 900 mohm, 10 V, 3.75 V
|
|||
STW10NK80Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW10NK80Z 功率场效应管, MOSFET, N沟道, 9 A, 800 V, 900 mohm, 10 V, 3.75 V
|
||
STW8NK80Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW8NK80Z 功率场效应管, MOSFET, N沟道, 6.2 A, 800 V, 1.5 ohm, 10 V, 3.75 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review