Technical parameters/rated voltage (DC): -55.0 V
Technical parameters/rated current: -74.0 A
Technical parameters/drain source resistance: 20.0 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 200 W
Technical parameters/product series: IRF4905
Technical parameters/drain source voltage (Vds): 55.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 74.0 A
Technical parameters/rise time: 99.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF4905PBF
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IRF4905PBF 晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
|
||
IRF4905PBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRF4905PBF 晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
|
||
IRF4905PBF
|
IFC | 功能相似 |
INFINEON IRF4905PBF 晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
|
|||
IRF4905SPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRF4905SPBF 晶体管, MOSFET, P沟道, 64 A, -55 V, 20 mohm, -10 V, -4 V
|
||
STP80PF55
|
ST Microelectronics | 功能相似 | TO-220-3 |
P 沟道 STripFET™ 功率 MOSFET,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
|
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