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Description P 沟道 STripFET™ 功率 MOSFET,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
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Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
8.78  yuan 8.78yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(2971) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-55.0 V

 

Technical parameters/rated current:

-80.0 A

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.018 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

300 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

55 V

 

Technical parameters/Leakage source breakdown voltage:

55.0 V

 

Technical parameters/breakdown voltage of gate source:

±16.0 V

 

Technical parameters/Continuous drain current (Ids):

80.0 A

 

Technical parameters/rise time:

190 ns

 

Technical parameters/Input capacitance (Ciss):

5500pF @25V(Vds)

 

Technical parameters/rated power (Max):

300 W

 

Technical parameters/descent time:

80 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

300W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.4 mm

 

Dimensions/Width:

4.6 mm

 

Dimensions/Height:

9.15 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Appl

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