Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 200 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 74A
Technical parameters/rise time: 99 ns
Technical parameters/Input capacitance (Ciss): 3400pF @25V(Vds)
Technical parameters/descent time: 96 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF4905PBF
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IRF4905PBF 晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
|
||
IRF4905PBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRF4905PBF 晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
|
||
IRF4905PBF
|
IFC | 功能相似 |
INFINEON IRF4905PBF 晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
|
|||
IRF4905SPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRF4905SPBF 晶体管, MOSFET, P沟道, 64 A, -55 V, 20 mohm, -10 V, -4 V
|
||
STP80PF55
|
ST Microelectronics | 功能相似 | TO-220-3 |
P 沟道 STripFET™ 功率 MOSFET，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
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