Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 2.7 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 800 V
Technical parameters/leakage source breakdown voltage: 800V (min)
Technical parameters/Continuous drain current (Ids): 4.00 A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 1000pF @25V(Vds)
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412900951
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBE30PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
N 通道 MOSFET，600V 至 1000V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
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||
IRFBE30PBF
|
Infineon | 功能相似 | TO-220-3 |
N 通道 MOSFET，600V 至 1000V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
IRFBE30PBF
|
VISHAY | 功能相似 | TO-220-3 |
N 通道 MOSFET，600V 至 1000V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
|
IRFBE30PBF
|
LiteOn | 功能相似 | TO-220-3 |
N 通道 MOSFET，600V 至 1000V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
STP10P6F6
|
ST Microelectronics | 功能相似 | TO-220-3 |
P沟道60 V ， 0.15 I© （典型值） ， 10 A STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET采用DPAK和TO- 220封装 P-channel 60 V, 0.15 Ω typ., 10 A STripFET⢠VI DeepGATE⢠Power MOSFET in DPAK and TO-220 packages
|
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