Technical parameters/drain source resistance: | 3 Ω |
|
Technical parameters/dissipated power: | 125 W |
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Technical parameters/Input capacitance: | 1300pF @25V |
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Technical parameters/drain source voltage (Vds): | 800 V |
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Technical parameters/Leakage source breakdown voltage: | 800 V |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Length: | 10.51 mm |
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Dimensions/Packaging: | TO-220 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP5NK80Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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