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Model STP5NK80Z
Description N 通道 MDmesh™ SuperMESH™，700V 至 1200V，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
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Brand: ST Microelectronics
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
10.88  yuan 10.88yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6037) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

800 V

 

Technical parameters/rated current:

4.30 A

 

Technical parameters/rated power:

110 W

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

1.9 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

110 W

 

Technical parameters/threshold voltage:

3.75 V

 

Technical parameters/drain source voltage (Vds):

800 V

 

Technical parameters/Leakage source breakdown voltage:

800 V

 

Technical parameters/breakdown voltage of gate source:

±30.0 V

 

Technical parameters/Continuous drain current (Ids):

4.30 A

 

Technical parameters/rise time:

25 ns

 

Technical parameters/Input capacitance (Ciss):

910pF @25V(Vds)

 

Technical parameters/rated power (Max):

110 W

 

Technical parameters/descent time:

30 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

110000 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.4 mm

 

Dimensions/Width:

4.6 mm

 

Dimensions/Height:

9.15 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packagi

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