Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.13 Ω
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 30 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 10A
Technical parameters/rise time: 5.3 ns
Technical parameters/Input capacitance (Ciss): 340pF @48V(Vds)
Technical parameters/rated power (Max): 35 W
Technical parameters/descent time: 3.7 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 30W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTE2383
|
NTE Electronics | 功能相似 | TO-220 |
TO-220P-CH 100V 10.5A
|
||
NTE2387
|
NTE Electronics | 功能相似 | TO-220 |
NTE ELECTRONICS NTE2387. 场效应管, MOSFET, N沟道, 800V, 4A, TO-220
|
||
SPP20N60S5
|
Infineon | 功能相似 | TO-220-3 |
Infineon CoolMOS™S5 功率 MOSFET 系列 ### MOSFET 晶体管，Infineon Infineon 庞大且全面的 MOSFET 设备组合包括 OptiMOS™ 与 CoolMOS™ 系列。 这些产品提供最新一代最先进功率 MOSFET 中的顶级性能
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review