Technical parameters/rated voltage (DC): 650 V
Technical parameters/rated current: 20.0 A
Technical parameters/rated power: 208 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 190 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 208 W
Technical parameters/threshold voltage: 4.5 V
Technical parameters/input capacitance: 3.00 nF
Technical parameters/gate charge: 103 nC
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 20.0 A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 3000pF @25V(Vds)
Technical parameters/rated power (Max): 208 W
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/working junction temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 208W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10 mm
External dimensions/width: 4.4 mm
External dimensions/height: 15.65 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP10P6F6
|
ST Microelectronics | 功能相似 | TO-220-3 |
P沟道60 V ， 0.15 I© （典型值） ， 10 A STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET采用DPAK和TO- 220封装 P-channel 60 V, 0.15 Ω typ., 10 A STripFET⢠VI DeepGATE⢠Power MOSFET in DPAK and TO-220 packages
|
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