Chip AI consultant
Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/Maximum allowable collector current: | 2000mA |
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Technical parameters/minimum current amplification factor (hFE): | 1000 |
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Technical parameters/maximum current amplification factor (hFE): | 12000 |
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Encapsulation parameters/Encapsulation: | TO-252-2 |
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Dimensions/Packaging: | TO-252-2 |
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Other/Minimum Packaging: | 2500 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
CJ | 功能相似 | TO-252-2 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
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MJD112
|
ON Semiconductor | 功能相似 | DPAK-3 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
||
MJD112
|
ON Semiconductor | 功能相似 | DPAK-3 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
||
MJD112
|
ST Microelectronics | 功能相似 | TO-252 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
||
MJD112G
|
ON Semiconductor | 类似代替 | TO-252-3 |
NPN 复合晶体管，On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
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Motorola | 功能相似 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
|||
MJD112T4
|
ST Microelectronics | 功能相似 | TO-252-3 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
||
MJD112T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD112T4G. 达林顿晶体管, NPN, 100V, D-PAK
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