Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 2.00 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1750 mW
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 1000
Technical parameters/Maximum current amplification factor (hFE): 12000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/gain bandwidth: 25MHz (Min)
Technical parameters/dissipated power (Max): 1750 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: DPAK-3
External dimensions/packaging: DPAK-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
CJ | 功能相似 | TO-252-2 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
||
MJD112
|
ON Semiconductor | 功能相似 | DPAK-3 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
||
MJD112
|
ON Semiconductor | 功能相似 | DPAK-3 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
||
MJD112
|
ST Microelectronics | 功能相似 | TO-252 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
||
MJD112G
|
ON Semiconductor | 类似代替 | TO-252-3 |
NPN 复合晶体管,On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。 ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声,双匹配和复杂的双极晶体管
|
||
|
|
Motorola | 功能相似 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
|||
MJD112T4
|
ST Microelectronics | 功能相似 | TO-252-3 |
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
|
||
MJD112T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD112T4G. 达林顿晶体管, NPN, 100V, D-PAK
|
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