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Model MJD112

Description 互补达林顿功率晶体管 Complementary Darlington Power Transistors

Brand: ON Semiconductor

Packaging DPAK-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	100 V
Technical parameters/rated current:	2.00 A
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1750 mW
Technical parameters/breakdown voltage (collector emitter):	100 V
Technical parameters/Maximum allowable collector current:	2A
Technical parameters/minimum current amplification factor (hFE):	1000
Technical parameters/maximum current amplification factor (hFE):	12000
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/gain bandwidth:	25MHz (Min)
Technical parameters/dissipated power (Max):	1750 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	DPAK-3
Dimensions/Packaging:	DPAK-3
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tube
Other/Minimum Packaging:	2500
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead
Customs information/ECCN code:	EAR99

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