Chip AI consultant
Technical parameters/rated voltage (DC): | 100 V |
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Technical parameters/rated current: | 2.00 A |
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Technical parameters/halogen-free state: | Halogen Free |
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Technical parameters/output voltage: | 100 V |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 1.75 W |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/thermal resistance: | 71.4℃/W (RθJA) |
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Technical parameters/Maximum allowable collector current: | 2A |
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Technical parameters/minimum current amplification factor (hFE): | 1000 |
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Technical parameters/maximum current amplification factor (hFE): | 12000 |
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Technical parameters/rated power (Max): | 1.75 W |
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Technical parameters/DC current gain (hFE): | 12000 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/gain bandwidth: | 25MHz (Min) |
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Technical parameters/dissipated power (Max): | 20 W |
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Technical parameters/input voltage: | 5 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.38 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD112T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD112T4G. 达林顿晶体管, NPN, 100V, D-PAK
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