Technical parameters/polarity: | N-CH |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/Continuous drain current (Ids): | 42A |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | DPAK |
|
Dimensions/Packaging: | DPAK |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQD50N03-06P-GE3
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET 30V 84A 88W 6.5mohm @ 10V
|
||
SQD50N03-06P-GE3
|
Vishay Siliconix | 完全替代 | TO-252 |
MOSFET 30V 84A 88W 6.5mohm @ 10V
|
||
SQD50N03-06P-GE3
|
VISHAY | 完全替代 | DPAK |
MOSFET 30V 84A 88W 6.5mohm @ 10V
|
||
SQD50N04-09H-GE3
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 40V 50A TO252
|
||
|
|
VISHAY | 完全替代 | TO-252 |
MOSFET N-CH 40V 50A TO252
|
||
SQD50N06-07L-GE3
|
VISHAY | 完全替代 | TO-252 |
MOSFET N-CH 60V 50A TO252
|
||
SQD50N06-07L-GE3
|
Vishay Siliconix | 完全替代 | TO-252 |
MOSFET N-CH 60V 50A TO252
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review