Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0064 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 136 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 50A
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 完全替代 | DPAK |
MOSFET N-CH D-S 40V 42A TO252
|
||
SQD40N04-10A-GE3
|
Vishay Siliconix | 完全替代 | TO-252 |
MOSFET N-CH D-S 40V 42A TO252
|
||
SQD50N02-04-GE3
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH D-S 20V 50A TO252
|
||
SQD50N03-06P-GE3
|
Vishay Semiconductor | 完全替代 | TO-252 |
MOSFET 30V 84A 88W 6.5mohm @ 10V
|
||
SQD50N03-06P-GE3
|
Vishay Siliconix | 完全替代 | TO-252 |
MOSFET 30V 84A 88W 6.5mohm @ 10V
|
||
SQD50N03-06P-GE3
|
VISHAY | 完全替代 | DPAK |
MOSFET 30V 84A 88W 6.5mohm @ 10V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review