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Model SQD50N03-06P-GE3
Description VISHAY SQD50N03-06P-GE3 Transistor, MOSFET, N-channel, 50 A, 30 V, 0.0047 ohm, 10 V, 2 V
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Brand: Vishay Semiconductor
Packaging TO-252
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1309) Minimum order quantity(1)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.0047 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 83 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/operating temperature (Max): 175 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252

External dimensions/packaging: TO-252

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

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