Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 50A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DPAK
External dimensions/packaging: DPAK
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQD50N02-04-GE3
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH D-S 20V 50A TO252
|
||
SQD50N04-09H-GE3
|
Vishay Siliconix | 完全替代 | TO-252-3 |
MOSFET N-CH 40V 50A TO252
|
||
|
|
VISHAY | 完全替代 | TO-252 |
MOSFET N-CH 40V 50A TO252
|
||
SQD50N06-07L-GE3
|
VISHAY | 完全替代 | TO-252 |
MOSFET N-CH 60V 50A TO252
|
||
SQD50N06-07L-GE3
|
Vishay Siliconix | 完全替代 | TO-252 |
MOSFET N-CH 60V 50A TO252
|
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