Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 300 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 52A
Technical parameters/rise time: 29 ns
Technical parameters/Input capacitance (Ciss): 2845pF @25V(Vds)
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF5210PBF
|
International Rectifier | 功能相似 | TO-220-3 |
P 通道功率 MOSFET 超过 8A，Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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IRF5210SPBF
|
International Rectifier | 功能相似 | TO-263-3 |
INFINEON IRF5210SPBF 晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
|
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IRF5210SPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF5210SPBF 晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
|
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IRF5210STRLPBF
|
Infineon | 功能相似 | TO-263-3 |
INFINEON IRF5210STRLPBF 场效应管, MOSFET, P沟道, -100V, 40A D2-PAK, 整卷
|
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