IRF5210PBF In Stock|PDF|Datasheet|Price|Agent[IRF5210PBF Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

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Model IRF5210PBF

Description P 通道功率 MOSFET 超过 8A，Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备，外形可应对几乎任何板布局和热设计挑战。在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 MOSFET 晶体管，Infineon (IR) MOSFET 晶体管，Infineon Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。

Brand: International Rectifier

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(3638) Minimum order quantity(1)

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Technical parameters/rated voltage (DC):	-100 V
Technical parameters/rated current:	-40.0 A
Technical parameters/drain source resistance:	0.06 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	200 W
Technical parameters/product series:	IRF5210
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Leakage source breakdown voltage:	-100 V
Technical parameters/Continuous drain current (Ids):	-40.0 A, 40.0 A
Technical parameters/rise time:	86.0 ns
Technical parameters/Input capacitance (Ciss):	2700pF @25V(Vds)
Technical parameters/rated power (Max):	200 W
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.54 mm
Dimensions/Height:	15.24 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 175℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2014/12/17
Customs information/ECCN code:	EAR99